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2SC4427 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC4427 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 4 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4427 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE== 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 10 40 hFE-2 DC current gain IC=1.5A ; VCE=5V 8 fT Transition frequency IC=0.3A ; VCE=10V 15 MHz COB Output capacitance VCB=10V;f=1MHz 90 pF Switching times ton Turn-on time 0.5 µs tstg Storage time 3.0 µs tf Fall time IC=3A;RL=133C IB1=0.6A; IB2=-1.2A VCC=400V 0.3 µs hFE-1 classifications K L M 10-20 15-30 20-40 |
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