LM7171QML, LM7171QML-SP

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SNOSAR5C – FEBRUARY 2009 – REVISED APRIL 2013

LM7171 (±5) Electrical Characteristics DC Parameters

(1) (2)

The following conditions apply, unless otherwise specified.

DC:

Sub-

Symbol

Parameter

Conditions

Notes

Min

Max

Units

groups

Input Offset Voltage

−1.5

1.5

mV

1

−7.0

7.0

mV

2, 3

Input Bias Current

10

µA

1

12

µA

2, 3

Input Bias Current

10

µA

1

12

µA

2, 3

Input Offset Current

−4.0

4.0

µA

1

−6.0

6.0

µA

2, 3

CMRR

Common Mode Rejection Ratio

80

dB

1

70

dB

2, 3

Large Signal Voltage Gain

75

dB

1

70

dB

2, 3

72

dB

1

67

dB

2, 3

Output Swing

3.2

-3.2

V

1

3.0

-3.0

V

2, 3

2.9

-2.9

V

1

2.8

-2.75

V

2, 3

Output Current (Open Loop)

Sourcing

29

mA

1

28

mA

2, 3

Sinking

-29

mA

1

-27.5

mA

2, 3

Supply Current

8.0

mA

1

9.0

mA

2, 3

(1)

Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post

Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.

Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, per Test Method

1019, Condition A.

(2)

Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post

Radiation Limits Table. Low dose rate testing has been peformed on a wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-

STD-883, with no enhanced low dose rate sensitivity (ELDRS).

(3)

(4)

The open loop output current is specified, by the measurement of the open loop output voltage swing, using 100

Ω output load.

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