DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

GA200-GA201A

SILICON CONTROLLED RECTIFIER

NANOSECOND SWITCHING

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Ratings

Symbol

GA200

GA200A

GA201

GA201A

GB200

GB200A

GB201

GB201A

Repetitive peak off state voltage

60V

100V

60V

100V

Repetitive peak on state current

Up to 100A

DC on state current

70°C ambient

70°C case

200mA

400mA

-

6A

Peak gate current

250mA

250mA

Average gate current

25mA

50mA

Reverse gate current

3mA

3mA

Reverse gate voltage

5V

5V

Thermal resistance

R

ӨCA

300°C/W

Storage temperature range

-65° to 200°C

Operating temperature range

-65° to 150°C

Test

Symbol

Min.

Typ.

Max.

Units

Test Conditions

Delay time

-

-

20

10

30

-

ns

Rise time (GA200, GA200A, GB200, GB200A)

-

-

15

25

25

-

ns

Rise time (GA201, GA201A, GB201, GB201A)

-

-

10

20

20

-

ns

Gate trigger on pulse width

-

0.02

0.05

µs

Circuit commutated turn-off time

(GA200, GA201, GB200, GB201)

(GA200A, GA201A, GB200A, GB201A)

-

-

0.8

0.3

2.0

0.5

µs

-

0.01

0.1

µA

Off-state current

-

20

100

µA

°C

Reverse current

-

1.0

10

mA

Reverse gate current

-

0.01

0.1

mA

Gate trigger current

-

10

200

µA

0.4

0.6

0.75

V

Gate trigger voltage

0.10

0.20

-

V

T = 150°C

On-state voltage

-

1.1

1.5

V

0.3

2.0

5.0

mA

Holding current

0.05

0.2

-

mA

T = 150°C

Off-state voltage - critical rate of rise

dv/dt

20

40

-

V/µS

Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.

sales@digitroncorp.com

fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120117