3N201 datasheet(2/6 Pages) DIGITRON

2 / 6 page

DIGITRON SEMICONDUCTORS

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

3N201-3N203

DUAL GATE MOSFET VHF AMPLIFIER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

FUNCTIONAL CHARACTERISTICS

Noise figure

(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)

(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)

3N201

3N203

1.8

5.3

4.5

6.0

Common source power gain

(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)

(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)

(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)

3N201

3N203

3N202

Gps

Gc(5)

Bandwidth

(VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz)

(VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz)

(VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz)

3N201

3N202

3N203

5.0

4.5

3.0

9.0

7.5

6.0

MHz

Gain control gate-supply voltage (4)

(VDD = 18Vdc, ΔGps = -30dB, f = 200MHz)

(VDD = 18Vdc, ΔGps = -30dB, f = 45MHz)

3N201

3N203

VGG(GC)

-1.0

-0.6

-3.0

Vdc

Note 1: All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting network is functioning properly.

Note 2: Pulse test: pulse width = 300µs. Duty cycle ≤ 2.0%.

Note 3: This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating.

Note 4: ΔGps is defined as the change from the value at VGG = 7.0V and VGG = 6.0V.

Note 5: Power gain conversion.

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fax +1.908.245-0555

www.digitroncorp.com

Rev. 20120705

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