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LL4448 Datasheet(PDF) 1 Page - Shanghai Lunsure Electronic Tech |
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LL4448 Datasheet(HTML) 1 Page - Shanghai Lunsure Electronic Tech |
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1 / 3 page ![]() CE LL4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode Mini-MELF . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4448 MECHANICAL DATA . Case: MinMelf glass case(SOD- 80) Dimensions in inches and (millimeters) . Weight: Approx. 0.05gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units Reverse voltage VR 75 Volts Peak reverse voltage VRM 100 Volts Average rectified current, Half wave rectification with IAV 1501) mA Resistive load at TA=25 and F 50Hz Surge forward current at t<1S and TJ=25 IFSM 500 mW Power dissipation at TA=25 Ptot 5001) mW Junction temperature TJ 175 Storage temperature range TSTG -65 to + 175 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Min. Typ. Max. Units Forward voltage at IF=5mA VF 0.62 0.72 V at IF=10mA VF 1 V Leakage current at VR=20V IR 25 nA at VR=75V IR 5 A at VR=20V, TJ=150 IR 50 A Junction capacitance at VR=VF=0V CJ 4 pF Reverse breakdown voltage tested with 100 A pluse V(BR)R 100 V Reverse recovery time from IF=10mA to IR=1mA, 4 VR=6V, RL=100 Thermal resistance junction to ambient R JA 3501) K/W Rectification efficience at f=100MHz,VRF=2V 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) trr ns Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 |
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