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HAT1091C Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT1091C Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() HAT1091C R07DS1172EJ0500 Rev.5.00 Page 3 of 6 Mar 19, 2014 Main Characteristics 1.6 1.2 0.8 0.4 0 50 100 150 200 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 –0.03 –1 –3 –10 –30 –100 –10 –8 –6 –4 –2 0 –2 –4 –6 –8 –10 –10 –8 –6 –4 –2 0 –1 –2 –3 –4 –5 –0.03 –0.01 –100 –300 –200 –100 0 –2 –4 –6 –8 –10 –0.1 –10 –1 100 10000 1000 10 –400 ID = -1.5 A –0.5 A –0.8 A –10 V –3.5 V –2.5 V –7 V –3 V –2 V 100 μs 10 μs Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain Source Voltage VDS (V) Maximum Safe Operation Area Typical Output Characteristics Typical Transfer Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain Current ID (A) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current VGS = –2.5 V –4.5 V Pulse Test Pulse Test VGS = –1.5 V –25 °C Tc = 75 °C 25 °C Pulse Test VDS = –10 V Pulse Test Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) When using the FR4 board. 1 shot pulse, Ta = 25 °C Operation in this area is limited by RDS(on) |
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