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2N682 Datasheet(PDF) 2 Page - Digitron Semiconductors

Part # 2N682
Description  SILICON CONTROLLED RECTIFIER
PDF  7 Pages
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Manufacturer  DIGITRON [Digitron Semiconductors]
Direct Link  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N682 Datasheet(HTML) 2 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N681-2N692, 2N5204-2N5207
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS
Symbol
Characteristics
2N681-
2N692
2N5204-
2N5207
Units
Conditions
I2√t
Maximum I2√t capability for
individual device fusing (1)
1450
5800
A2√s
t = 0.1 to 10ms initial TJ ≤ 125°C,
VRRM following surge = 0
VTM
Maximum peak on-state voltage
2
2.3
V
TJ = 25°C, IT(AV) = 16A(50A peak) – 2N681
IT(AV) = 22A (70A) peak – 2N5204
IH
Maximum holding current
20 @ 25°C
200 @-40°C
mA
Anode supply = 24V, initial IT= 1.0A
BLOCKING
100 typical
100
TJ = 125°C exponential to 100% rated VDRM
dv/dt
Minimum critical rate of rise of
off-state voltage
250 typical
250
V/µs
TJ = 125°C exponential to 67% rated VDRM
Maximum reverse and off-state
current
IR(AV) & ID(AV)
(average values)
IRM & IDM
(peak values)
VRRM & VDRM =
-
-
25 to 150V
6.5
-
200 & 250V
6.0
-
300V
5.0
-
400V
4.0
-
500V
3.0
-
600V
2.5
3.3
700V
2.25
-
800V
2.0
2.5
1000V
-
2.0
IR(-) & ID(-)
1200V
-
1.7
mA
TJ = 125°C, gate open circuited
SWITCHING
td
Typical delay time
1
1
µs
TC = 25°C, VDM = rated VDRM, ITM = 10A dc
resistive circuit. Gate pulse: 10 V,
40Ω source, tp = 6µs, tr = 0.1µs
Maximum non-repetitive rate of
rise of turned-on current
VDM = 25 to 600 V
100
-
VDM = 700 to 800 V
75
-
TC = 125°C, VDM = rated VDRM, ITM = 2 x
di/dt, gate pulse: 20V, 15 Ω, tp = 6µs,
tr = 0.1 µs maximum
di/dt
-
100
A/µs
TC = 125°C, VDM = 600V, ITM = 200A @
400Hz max. Gate pulse: 20V, 15Ω,
tp = 6µs, tr = 0.1µs max.
TRIGGERING
PGM
Maximum peak gate power
5
60
W
tp ≤ 5ms – 2N681
tp ≤ 500µs – 2N5204
PG(AV)
Maximum average gate power
0.5
0.5
W
IGM
Maximum peak positive gate
current
2
2
A
+VGM
Maximum peak positive gate
voltage
10
-
V
-VGM
Maximum peak negative gate
voltage
5
5
V
80
80
TC = min rated value. Max. required gate
trigger current is the lowest value which
will trigger all units with 6V anode to
cathode
40
40
TC = 25°C
Maximum required DC gate
current to trigger
18.5
20
TC = 125°C
IGT
Typical DC gate current to
trigger
30
30
mA
TC = 25°C, 6V anode to cathode
Note 1: I2t for time tx ≈ I2√t ● √tx
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130116



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