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9014C Datasheet(PDF) 1 Page - Unisonic Technologies |
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9014C Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 2 page  UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-031,A PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 TO-92 1 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector dissipation Pc 450 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=100 µA, IE=0 50 V Collector-emitter breakdown voltage BVCEO Ic=1mA, IB=0 45 V Emitter-base breakdown voltage BVEBO IE=100 µA, Ic=0 5 V Collector cutoff current ICBO VCB=50V, IE=0 50 nA Emitter cutoff current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=5V,Ic=1mA 60 280 1000 Collector-emitter saturation voltage VCE(sat) Ic=100mA, IB=5mA 0.14 0.3 V Base-emitter saturation voltage VBE(sat) Ic=100mA, IB=5mA 0.84 1.0 V Base-emitter on voltage VBE(on) VCE=5V, Ic=2mA 0.58 0.63 0.7 V Output Capacitance Cob VCB=10V, IE=0, f=1MHz 2.2 3.5 pF Current gain-Bandwidth Porduct fT VCE=5V, Ic=10mA 150 270 MHz Noise Figure NF VCE=5V, Ic=0.2mA f=1KHz, Rs=2K Ω 0.9 10 dB |
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