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BD238 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BD238
Description  -80V, PNP TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BD238 Datasheet(HTML) 2 Page - Unisonic Technologies

  BD238 Datasheet HTML 1Page - Unisonic Technologies BD238 Datasheet HTML 2Page - Unisonic Technologies BD238 Datasheet HTML 3Page - Unisonic Technologies  
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UNISONIC TECHNOLOGIES CO., LTD
BD238
PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw
2 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R226-002, B
ABSOLUTE MAXIMUM RATINGS (T
A=25
°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Power Dissipation
Pc
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A=25
°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-1mA, IE=0
-100
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-100mA, IB=0
-80
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC=-1mA, IE=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-100V, IE=0
-100
µA
Emitter Cut-Off Current
IEBO
VEB=-5V, IC=0
-1
mA
DC Current Gain
hFE(1)
VCE=-2V, IC=-150mA
40
hFE(2)
VCE=-2V, IC=-1A
25
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-1A, IB=-100mA
-0.6
V
Transition Frequency
fT
VCE=-10V, IC=-250mA,
f=10MHz
3
MHz



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