D313 datasheet(1/3 Pages) UTC

Part #	D313

Description	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC D313

NPN EPITAXIAL PLANAR TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R203-001,A

NPN EPITAXIAL PLANAR

TRANSISTOR

DESCRIPTION

The UTC D313 is designed for use in general purpose

amplifier and switching applications.

TO-220

1

1:BASE 2:COLLECTOR 3:EMITTER

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

Ic

3

A

Storage Temperature

TSTG

-55 ~ +150

°C

Junction Temperature

Tj

150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=1mA

60

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA

60

V

Emitter-Base Breakdown Voltage

BVEBO

IE=100uA

5

V

Collector Cut-Off Current

ICBO

VCB=20V, IE=0

0.1

mA

Emitter Cut-Off Current

IEBO

VEB=4V, IC=0

1.0

mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=2A, IB=0.2A

1.0

V

Base-Emitter On voltage

VBE(ON)

VCE=2V, IC=1A

1.5

V

DC Current Gain

hFE

IC=1A, VCE=2V

IC=0.1A,VCE=2V

40

320

CLASSIFICATION ON hFE

RANK

C

D

E

F

RANGE

40-80

60-120

100-200

160-320

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