UD3018 datasheet(2/3 Pages) UTC

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UD3018

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R214-023.a



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

250

Collector-Emitter Voltage

VCEO

250

Emitter-Base Voltage

VEBO

5.0

Collector-Emitter Voltage - 1.5V

VCEX

250

Continuous Collector Current

Peak Collector Current (Note 1)

Continuous Base Current

1.5

Total Power Dissipation @ TC=25°C

150

Operating Junction Temperature

-65~+150

°C

Storage Temperature Range

TSTG

-65~+150

°C

Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute

maximum ratings are those values beyond which the device could be permanently damaged.

2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Case

θJC

0.83

°C/W



ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

BVCEO(SUS) IC=30mA, IB=0

250

Collector Cut-Off Current

ICBO

VCB=250V, IE=0

µA

Emitter Cut-Off Current

IEBO

VEB=5.0V, IC=0

5.0

µA

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

VCE(sat)

IC=5.0A, IB=0.5A

1.0

DC Current Gain

hFE

IC=0.5A,VCE=5.0V

150

IC=1.0A,VCE=5.0V

150

IC=3.0A,VCE=5.0V

150

Base-Emitter On Voltage

VBE(on)

IC=5.0A, VCE=5.0V

1.2

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=1.0A, VCE=5.0V, ftest=1.0MHz

MHz

Output Capacitance

Cob

VCB=10V, IE=0, ftest=1.0MHz

400

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