MSD2N60 datasheet(3/9 Pages) BWTECH

Part #	MSD2N60

Description	600V N-Channel MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	BWTECH [Bruckewell Technology LTD]

Direct Link	http://www.bruckewell-semi.com

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3 / 9 page

MSD2N60 600V N-Channel MOSFET

©Bruckewell Technology Corporation Rev. A -2012

Source-Drain Diode Maximum Ratings and Characteristics

Continuous Source-Drain Diode Forward Current

––

2.0

ISM

Pulsed Source-Drain Diode Forward Current

––

6.0

VSD

Source-Drain Diode Forward Voltage IS=2A, VGS=0V

––

1.4

trr

Reverse Recovery Time

––

230

––

Qrr

Reverse Recovery Charge

IS=2 A , VGS= 0V

diF/dt=100A/μs

––

1.0

––

μC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C

3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C

4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

MSD2N60 Datasheet(PDF) 3 Page - Bruckewell Technology LTD