5N25G-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

5N25

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-852.b



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

250

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

3.8

Pulsed (Note 2)

IDM

Avalanche Current (Note 2)

IAR

3.8

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

3.7

Peak Diode Recovery dv/dt (Note 4)

dv/dt

5.5

V/ns

Power Dissipation

TA=25°C

2.5

TC=25°C

Derate above 25°C

0.29

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=6.2mH, IAS=3.8A, VDD=50V, RG=25Ω, Starting TJ=25°C.

4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note)

θJA

°C/W

Junction to Ambient

110

°C/W

Junction to Case

θJC

3.4

°C/W

Note: When mounted on the minimum pad size recommended (PCB Mount)

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