SEMICONDUCTOR

Nell High Power Products

UNIT

V

A

2.5

0.5

20

100

100

1.6

400

0.5

1.8

2.2

2.5

2.7

300

2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

V

=0, V

=500V

BE

CE

TEST CONDITIONS

V

=0, V

=500V, T

°C

BE

CE

=125

j

I =0, V

=450V, T = 125°C

B

CE

j

I =0, V

=5V

C

EB

Diode forward voltage

Collector to emitter saturation voltage

Functional test

PARAMETER

Collector to emitter sustaining voltage

Emitter cut-off current

Base to emitter saturation voltage

Collector cut-off current

Collector cut-off current

SYMBOL

V

*

CEO(SUS)

15

Fall time

Srorage time

10

*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.

UNIT

Min.

1.00

0.97

THERMAL RESISTANCE

TO-220AB

TO-3P(B)

PARAMETER

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

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0.5

RoHS

RoHS

BU941 Series

Min.

Typ.

Max.

I =0, V

=450V

B

CE

I =0, I =100mA, L=10mH,

B

C

V

=400V

clamp

I =8A, I =100mA

C

B

I =10A, I =250mA

C

B

I =12A, I =300mA

C

B

I =8A, I =100mA

C

B

I =10A, I =250mA

C

B

I =12A, I =300mA

C

B

DC current gain

I =10A

F

I = 5A, V

= 10V

C

CE

mA

μA

μA

mA

mA

V

V

=24V, L=7mH, V

=400V

CC

clamp

(see functional test circuit)

V

=12V, V

=300V, V

=0,

CC

clamp

BE

R

=47Ω, L=7mH, I =7A, I =70mA

BE

C

B

ORDERING INFORMATION SCHEME

Darlington series

BU941 Type, 15A / 400V

A

Package type

A = TO-220AB

B = TO-3P(B)

μS

BU941