SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

Min.

1.00

0.50

THERMAL RESISTANCE

PARAMETER

Thermal resistance, case to heatsink

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

62

IRF740 Series

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

nC

Max.

5.8

250

400

-100

100

0.49

330

14

27

50

24

120

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

V

= 0V, I = 250µA

GS

D

TEST CONDITIONS

I = 1mA, referenced to 25°C

D

V

=400V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

9

Gate to source charge

V

= 320V, V

= 10V, I = 10A

DS

GS

D

Drain to source leakage current

V/ºC

Ω

S

nA

T =125°C

C

Typ.

Min.

0.55

25.0

63

V

= 200V,

DD

(Note 1)

I = 10A,R = 20Ω,

D

D

V

= 10V, R =9.1Ω

GS

G

V

= 25V, V

= 0V, f =1MHz

DS

GS

V

= 30V, V

= 0V

GS

DS

V

= -30V, V

= 0V

GS

DS

V

=50V, I =6A

DS

D

Forward transconductance

Static drain to source on-state resistance

V

= 10V, l = 6A (Note 1)

GS

D

Gate to drain charge (Miller charge)

32

V

=320V, V

=0V

DS

GS

2.0

V

4.0

V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

nH

7.5

4.5

Internal source inductance

Internal drain inductance

Between lead, 6mm from

package and center of die

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

UNIT

Max.

TEST CONDITIONS

PARAMETER

SYMBOL

Typ.

Min.

V

I

= 10A, V

= 0V

SD

GS

Diode forward voltage

2.0

Integral reverse P-N junction

diode in the MOSFET

Continuous source to drain current

SD

10

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

40

I

= 10A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery time

ns

370

μC

Reverse recovery charge

3.8

Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%

.

Forward turn-on time

750

8.2

Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)

1400

www.nellsemi.com

Page 2 of 7

STATIC

DYNAMIC