MBR745 datasheet(2/5 Pages) NELLSEMI

2 / 5 page

SEMICONDUCTOR

MBR745 Series RoHS

RoHS

Nell Semiconductors

ABSOLUTE MAXIMUM RATINGS

UNIT

TEST CONDITIONS

PARAMETER

VALUE

Maximum average forward current

Non-repetitive peak surge current

lF(AV)

lFSM

7.5

SYMBOL

Non-repetitive avalanche energy

Repetitive avalanche current

EAS

lAR

T = 131°C, rated V

5 μs sine or 3 μs rect.pulse

Following any rated load

condition and with rated

applied

RRM

Surge applied at rated load condition half wave

single phase 60 Hz

690

150

T = 25°C, l

= 2A, L = 3.5mH

Current decaying linearly to zero in 1 μs

Frequency limited by T maximum V = 1.5 x V typical

ELECTRICAL SPECIFICATIONS

UNIT

TEST CONDITIONS

PARAMETER

VALUE

SYMBOL

Maximum forward voltage drop

Maximum instantaneous reverse current

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

(1)

VFM

(1)

lRM

dV/dt

15A

7.5A

15A

T = 25°C

T = 125°C

T = 25°C

T = 125°C

Rated DC voltage

V = 5 V

(test signal range 100 kHz to 1 MHZ) 25°C

Measured from top of terminal to mounting plane

Rated VR

0.84

0.57

0.72

0.1

400

1000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

UNIT

TEST CONDITIONS

PARAMETER

VALUE

SYMBOL

Maximum junction temperature range

RthJC

RthCS

-65 to 150

-65 to 175

0.5

0.07

6 (5)

12 (10)

°C/W

°C

Tstg

Maximum storage temperature range

Maximum thermal resistance,

junction to case

Typical thermal resistance,

case to heatsink

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style TO-220AC

DC operation

Mounting surface, smooth and greased

MBR745

kgf cm

(lbf in)

oz.

www.nellsemi.com

Page 2 of 5

Note

(1) Pulse width < 300 µs, duty cycle < 2%

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