7N80Z datasheet(2/6 Pages) UTC

2 / 6 page

7N80Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-929, A



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

Pulsed (Note 1)

IDM

26.4

Avalanche Energy

Single Pulsed (Note 2)

EAS

580

Repetitive (Note 1)

EAR

16.7

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=25mH, IAS=6.6A, VDD= 50V, RG=25Ω, Starting TJ=25°C

3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

θJC

2.4

°C/W

7N80Z Datasheet(PDF) 2 Page - Unisonic Technologies

7N80Z Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL