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39N20 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 39N20
Description  39A, 200V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

39N20 Datasheet(HTML) 2 Page - Unisonic Technologies

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39N20
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-817.a
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
(VGS=10V) TC=25°C
ID
39
A
Pulsed
IDM
156
A
Single Pulsed Avalanche Energy (Note 2)
EAS
860
mJ
Power Dissipation
PD
310
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.85mH, IAS = 39A, VDD=50V, RG=25Ω.
3. Pulse Width = 100μs
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
40
°C/W
Junction to Case
θJC
0.37
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
200
V
Drain-Source Leakage Current
IDSS
VDS=200V, VGS=0V
1
µA
Gate- Source Leakage
Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=19.5A
56
66
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
1250
pF
Output Capacitance
COSS
190
pF
Reverse Transfer Capacitance
CRSS
45
pF
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG
VGS=10V,VDD=50V,ID=39A
18.5 28
nC
Gate to Source Charge
QGS
6.5
nC
Gate to Drain Charge
QGD
4.6
nC
Turn-ON Time
tON
VDD=50V, ID=39A, VGS=10V,
RG=16Ω
30
70
ns
Turn-ON Delay Time
tD(ON)
160
ns
Rise Time
tR
150
ns
Turn-OFF Delay Time
tD(OFF)
150
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=39A
1.4
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
39
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
156
A



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