UTT80N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-468.b

PARAMETER

SYMBOL

RATINGS

UNIT

Gate Source Voltage

±20

V

Continuous Drain Current

80

A

Pulsed Drain Current

320

A

Avalanche Energy, Single Pulse

320

mJ

Power Dissipation

TO-220

137

W

TO-220F1

70

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/ TO-220F1

62.5

°C/W

Junction to Case

TO-220

0.91

°C/W

TO-220F1

1.77

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

80

V

Drain-Source Leakage Current

0.01

1

µA

Gate-Source Leakage Current

±

1

±

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.1

4.0

V

Static Drain-Source On-State Resistance

12

mΩ

DYNAMIC PARAMETERS

Input Capacitance

4700

pF

Output Capacitance

1260

pF

Reverse Transfer Capacitance

580

pF

SWITCHING PARAMETERS

Gate to Source Charge

25

37

nC

Gate to Drain Charge

69

116

nC

Total Gate Charge

144

180

nC

Turn-ON Delay Time

26

ns

Rise Time

50

ns

Turn-OFF Delay Time

61

ns

Fall-Time

30

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

80

A

Pulsed Current

320

Drain-Source Diode Forward Voltage

0.9

1.3

V

Note: 1. Defined by design. Not subject to production test.

2. Qualified at -20V and +20V.