UTT80N75

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-881.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

75

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

80

A

Pulsed

320

A

Avalanche Energy

Single Pulsed

330

mJ

Power Dissipation

167

W

Junction Temperature

-50~+150

°C

Storage Temperature Range

-50~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

0.75

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

75

V

Drain-Source Leakage Current

10

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

10

12

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3700

pF

Output Capacitance

730

pF

Reverse Transfer Capacitance

240

pF

SWITCHING PARAMETERS

Total Gate Charge

117

nC

Gate to Source Charge

27

nC

Gate to Drain Charge

47

nC

Turn-ON Delay Time

25

ns

Rise Time

25

ns

Turn-OFF Delay Time

66

ns

Fall-Time

30

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

80

A

Maximum Body-Diode Pulsed Current

320

A

Drain-Source Diode Forward Voltage

1.5

V

Body Diode Reverse Recovery Time

ns