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BSS127G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BSS127G-AE3-R
Description  0.021A, 600V SMALL-SIGNAL-TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BSS127G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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BSS127
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-824.B
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TA=25°C
ID
0.021
A
TA=70°C
0.017
A
Pulsed (TA=25°C)
IDM
0.09
A
Peak Diode Recovery dv/dt
dv/dt
6
kV/µs
Power Dissipation (TA=25°C )
PD
0.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
250
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
600
V
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+10 +100
nA
Reverse
VGS=-20V, VDS=0V
-10
-100
nA
Drain-Source Leakage Current
ID(OFF)
VGS=0V, VDS=600V, TJ=25°C
0.1
µA
VGS=0V, VDS=600V, TJ=150°C
10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=8µA
1.4
2.0
2.6
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=0.016A
330
600
Ω
VGS=10V, ID=0.016A
310
500
Ω
Forward Transconductance
gFS
|VDS|>2|ID|RDS(ON)MAX, ID=0.01A 0.007 0.015
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
21
28
pF
Output Capacitance
COSS
2.4
3
pF
Reverse Transfer Capacitance
CRSS
1.0
1.5
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=0~10V, VDS=300V,
ID=0.01A
0.07 0.10
nC
Gate to Source Charge
QGS
0.31
0.5
nC
Gate to Drain Charge
QGD
0.65
1.0
nC
Gate Plateau Voltage
Vplateau
3.56
V
Turn-ON Delay Time
tD(ON)
VDD=300V, VGS=10V,
ID=0.01A, RG=6Ω
6.1
19.0
ns
Rise Time
tR
9.7
14.5
ns
Turn-OFF Delay Time
tD(OFF)
14
21
ns
Fall-Time
tF
115
170
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TA=25°C
0.016
A
Maximum Body-Diode Pulsed Current
ISM
TA=25°C
0.09
A
Drain-Source Diode Forward Voltage
VSD
IF=0.016A, VGS=0V, TJ=25°C
0.82
1.2
V
Body Diode Reverse Recovery Time
tRR
VR=300V, IF=0.016A,
dIF/dt=100A/µs
160
240
ns
Body Diode Reverse Recovery Charge
QRR
13.2 19.8
µC



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