STB36NM60N datasheet(1/18 Pages) STMICROELECTRONICS

Part #	STB36NM60N

Description	Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 18 page

This is information on a product in full production.

October 2013

DocID023785 Rev 3

1/18

18

STB36NM60ND,

STW36NM60ND

Automotive-grade N-channel 600 V, 0.097

Ω typ., 29 A FDmesh™ II

Power MOSFETs (with fast diode) in D2PAK and TO-247 packages

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Automotive switching applications

Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

1

2

3

TO-247

1

3

TAB

D2PAK

Order codes

VDSS @TJ

max.

RDS(on)

max.

ID

STB36NM60ND

650 V

0.110

Ω

29 A

STW36NM60ND

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB36NM60ND

36NM60ND

D2PAK

Tape and reel

STW36NM60ND

36NM60ND

TO-247

Tube

www.st.com

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STB36NM60N Datasheet(PDF) 1 Page - STMicroelectronics

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