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STB36NM60ND Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB36NM60ND
Description  Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB36NM60ND Datasheet(HTML) 5 Page - STMicroelectronics

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DocID023785 Rev 3
5/18
STB36NM60ND, STW36NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
29
116
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 29 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 29 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 18)
-175
ns
Qrr
Reverse recovery charge
-
1.4
µC
IRRM
Reverse recovery current
-
16
A
trr
Reverse recovery time
ISD = 29 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 18)
-255
ns
Qrr
Reverse recovery charge
-
2.6
µC
IRRM
Reverse recovery current
-
20
A



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