DS2016 datasheet(2/9 Pages) DALLAS

2 / 9 page

DS2016

2 of 9

OPERATION MODE

MODE

A0-A10

DQ-DQ7

POWER

READ

STABLE

DATA OUT

ICCO

WRITE

STABLE

DATA IN

ICCO

DESELECT

HIGH-Z

ICCO

STANDBY

HIGH-Z

ICCS

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

VCC

Power Supply Voltage

-0.3V to +7.0V

VIN , VI/O

Input, Input/Output Voltage

-0.3 to VCC +0.3V

TSTG

Storage Temperature

-55°C to +125°C

TOPR

Operating Temperature

-40°C to +85°C

TSOLDER

Soldering Temperature/Time

260 °C for 10 seconds

CAPACITANCE

(TA= 25°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

NOTES

Input Capacitance

CIN

Input/Output Capacitance

CI/O

+5-VOLT OPERATION

RECOMMENDED DC OPERATING CONDITIONS

(TA= -40°C to +85°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

NOTES

Power Supply Voltage

VCC

4.5

5.0

5.5

Input High Voltage

VIH

2.0

VCC+0.3

Input Low Voltage

VIL

-0.3

0.8

Data Retention Voltage

VDR

2.0

5.5

DC CHARACTERISTICS

(TA= -40°C to +85°C; VCC = 5V ± 10%)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input Leakage Current

IIL

≤ V

± 0.1

µA

I/O Leakage Current

ILO

= VIH, 0V

≤ V

± 0.5

µA

Output High Current

IOH

VOH = 2.4V

-1.0

Output Low Current

IOL

VOL = 0.4V

4.0

Standby Current

ICCS1

= 2.0V

0.3

Standby Current

ICCS2

≥ V

CC -0.5V tA =60°C

µA

Standby Current

ICCS2

≥ V

CC -0.5V tA =25°C

100

Operating Current

ICCO

= 0.8V, 200 ns cycle

DS2016 Datasheet(PDF) 2 Page - Dallas Semiconductor

DS2016 Datasheet(HTML) 2 Page - Dallas Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL