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PMF170XP Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMF170XP Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 15 page ![]() NXP Semiconductors PMF170XP 20 V, 1 A P-channel Trench MOSFET PMF170XP All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 S source 3 D drain 1 2 3 SC-70 (SOT323) 017aaa094 S D G 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] PMF170XP XD% [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - -20 V VGS gate-source voltage Tj = 25 °C -12 12 V VGS = -4.5 V; Tamb 25 °C [1] - -1 A ID drain current VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -4 A [2] - 290 mW Tamb = 25 °C [1] - 360 mW Ptot total power dissipation Tsp = 25 °C - 1670 mW Tj junction temperature -55 150 °C |
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