©

1996

DATA SHEET

Document No. P11673EJ1V0DS00 (1st edition)

Date Published August 1996 P

Printed in Japan

SILICON TRANSISTOR

2SC3587

The 2SC3587 is an NPN epitaxial transistor designed for low-

noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise

and high-gain characteristics in a wide collector current region, and

has a wide dynamic range.

FEATURES

• Low noise

: NF = 1.7 dB TYP.

@ f = 2 GHz

NF = 2.6 dB TYP.

@ f = 4 GHz

@ f = 4 GHz

°°°°°C)

°°°°°C)

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

PACKAGE DIMENSIONS (in mm)

3.8 MIN.

E

CB

E

45

°

0.5

± 0.05

2.55

± 0.2

2.1

φ

3.8 MIN.

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

580

mW

Junction Temperature

200

°C

Storage Temperature

-65 to +150

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

1.0

µA

Emitter Cut-off Current

1.0

µA

DC Current Gain

50

100

250

Gain Bandwidth Product

10.0

GHz

Reverse Transfer Capacitance

0.2

0.7

pF

Noise Figure

NF

Note

f = 2 GHz

1.7

2.4

dB

f = 4 GHz

2.6

dB

Insertion Gain

f = 2 GHz

10.5

12.5

dB

f = 4 GHz

7.5

dB

Maximum Available Gain

MAG

10

dB

Power Gain

f = 2 GHz

12.5

dB

f = 4 GHz

8.0

dB