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MJD112 Datasheet(PDF) 5 Page - ON Semiconductor

Part # MJD112
Description  Complementary Darlington Power Transistors
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD112 Datasheet(HTML) 5 Page - ON Semiconductor

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MJD112 (NPN), MJD117 (PNP)
http://onsemi.com
5
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
520
3
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
100
ms
1ms
dc
0.1
1
3
7
10
10
730
25
25
T, TEMPERATURE (
°C)
0
50
75
100
125
15
20
15
10
5
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
TC
0.7
5ms
50
70
200
500
ms
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25°C
200
10
50
70
100
0.1
2
6
20
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob



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