DATA SHEET

SILICON TRANSISTOR

2SC3663

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

1997

©

Document No. P10406EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

DATA SHEET

FEATURES

•

Low-voltage, low-current, low-noise and high-gain

NF = 3.0 dB TYP.

PA, f = 1.0 GHz

PA, f = 1.0 GHz

•

Ideal for battery drive of pagers, compact radio equipment,

cordless phones, etc.

•

Gold electrode gives high reliability.

•

Mini mold package, ideal for hybrid ICs.

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PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

15

V

Collector to Emitter Voltage

8V

Emitter to Base Voltage

2V

Collector Current

5mA

Total Power Dissipation

50

mW

Junction Temperature

150

qC

Storage Temperature

ð65 to +150

qC

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PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

0.1

PA

Emitter Cut-off Current

0.1

PA

DC Current Gain

PA, pulse

50

100

250

Gain Bandwidth Product

4

GHz

Insertion Power Gain

4.0

6.5

dB

Maximum Available Gain

MAG

12.5

dB

Noise Figure

NF

PA, f = 1.0 GHz

3.0

4.5

dB

Associated Power Gain

PA, f = 1.0 GHz

3.5

dB

Collector Capacitance

Note

0.4

0.6

pF

Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.

PACKAGE DIMENSIONS (in mm)

2.8 ± 0.2

1.5

C

Marking

E

B

0.65

+0.1

–0.15

PIN CONNECTIONS

E: Emitter

B: Base

C: Collector

Marking: R62