DS11303 Rev. K-2

1 of 3

2N7002

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

·

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Total Power Dissipation (Note 1)

200

1.60

mW

mW/°C

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

·

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: K72, K7A

·

Weight: 0.008 grams (approx.)

Mechanical Data

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

D

S

G

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.19

1.40

C

2.10

2.50

D

0.89

1.05

E

0.45

0.61

G

1.78

2.05

H

2.65

3.05

J

0.013

0.15

K

0.89

1.10

L

0.45

0.61

M

0.076

0.178

All Dimensions in mm