IXYS reserves the right to change limits, test conditions, and dimensions.

IXTF280N055T

≤ 300 μs, duty cycled ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm

from the plastic body.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

70

110

S

C

iss

9800

pF

C

OSS

V

1450

pF

C

rss

320

pF

t

d(on)

32

n s

t

r

V

55

n s

t

d(off)

R

49

n s

t

f

37

n s

Q

g(on)

200

nC

Q

gs

V

50

nC

Q

gd

50

nC

R

thJC

0.75 °C/W

R

thCH

0.15

°C/W

Source-Drain Diode

Characteristic Values

T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

150

A

I

SM

Pulse width limited by T

JM

600

A

V

SD

I

1.0

V

t

rr

I

n s

V

(IXTF) Outline

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478B2

7,071,537

Leads:

1. Gate;

2, 3.

Source;

4, 5. Drain

6. Isolated.

All leads and tab are tin plated.

ADVANCETECHNICALINFORMATION

The product presented herein is under development.

The Technical Specifications offered

are derived from a subjective evaluation of the design, based upon prior knowledge and

experience, and constitute a "considered reflection" of the anticipated result.

IXYS reserves

the right to change limits, test conditions, and dimensions without notice.