ZSPM9010

Ultra-Compact, High-Performance, High-Frequency DrMOS

Data Sheet

March 8, 2013

© 2013 Zentrum Mikroelektronik Dresden AG

— Rev.1.04

All rights reserved. The material contained herein may not be reproduced, adapted, merged, translated, stored, or used without

the prior written consent of the copyright owner. The information furnished in this publication is subject to changes without

notice.

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PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

High-Side Driver

Output Impedance, Sourcing

1

Ω

Output Impedance, Sinking

Sink Current=100mA

0.8

Ω

Rise Time for GH=10% to 90%

6

ns

Fall Time for GH=90% to 10%

5

ns

LS to HS Deadband Time: GL

going LOW to GH going HIGH,

1V GL to 10 % GH

10

ns

PWM LOW Propagation Delay:

PWM going LOW to GH going

16

30

ns

PWM HIGH Propagation Delay

with SMOD# Held LOW:

PWM going HIGH to GH going

SMOD# = LOW

30

ns

Propagation Delay Exiting

Tri-state: PWM (from Tri-state)

going HIGH to GH going HIGH,

30

ns

Low-Side Driver

Output Impedance, Sourcing

Source Current=100mA

1

Ω

Output Impedance, Sinking

Sink Current=100mA

0.5

Ω

Rise Time for GL = 10% to 90%

20

ns

Fall Time for GL = 90% to 10%

13

ns

HS to LS Deadband Time:

SW going LOW to GL going

HIGH, 2.2V SW to 10% GL

12

ns

PWM-HIGH Propagation Delay:

PWM going HIGH to GL going

9

25

ns

Propagation Delay Exiting

Tri-state: PWM (from Tri-state)

going LOW to GL going HIGH,

20

ns

Boot Diode

Forward-Voltage Drop

0.35

V

Breakdown Voltage

22

V