DMN100 datasheet(1/3 Pages) DIODES

Part #	DMN100

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

DS30049 Rev. 5 - 2

1 of 3

DMN100

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

·

Extremely Low On-Resistance:

170m

W @VGS = 4.5V

·

High Drain Current: 1.1A

·

Ideal for Notebook Computer, Portable Phone,

PCMCIA Cards, and Battery Powered Circuits

Maximum Ratings

@ TA = 25

°C unless otherwise specified

Characteristic

Symbol

DMN100

Units

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

Continuous

VGSS

±20

V

Drain Current

Continuous

Pulsed

ID

± 1.1

± 4.0

A

Total Power Dissipation

Pd

500

mW

Thermal Resistance, Junction to Ambient

RqJA

250

K/W

Operating and Storage Temperature Range

Tj,TSTG

-55 to +150

°C

Notes:

1. Pulse width

£ 300ms, duty cycle £ 2%.

·

Case: SC-59, Molded Plastic

·

Case Material - UL Flammability Rating

Classification 94V-0

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagrams

·

Weight: 0.008 grams (approx.)

·

Ordering Information, See Sheet 2

Mechanical Data

A

E

J

L

M

B C

H

G

D

K

TOP VIEW

D

S

G

SC-59

Dim

Min

Max

A

0.30

0.50

B

1.40

1.80

C

2.50

3.00

D

0.85

1.05

E

0.30

0.70

G

1.70

2.10

H

2.70

3.10

J

¾

0.10

K

1.00

1.40

L

0.55

0.70

M

0.10

0.35

All Dimensions in mm

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