DT014L datasheet(1/4 Pages) DIODES

Part #	DT014L

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

1 / 4 page

D

S11603 Rev. C-4

1 of 4

DT014L

N-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

Thermal Characteristics

Notes:

1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.

1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.

1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.

1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Note 1a Continuous

Pulsed

ID

±2.6

±10

A

Maximum Power Dissipation

Note 1 a

Note 1 b

Note 1 c

Pd

3.0

1.3

1.1

W

Operating and Storage Temperature Range

Tj,TSTG

-65 to +150

°C

·

High Cell Density DMOS Technology

·

Low On-State Resistance

·

High Power and Current Capability

·

Fast Switching Speed

·

High Transient Tolerance

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction-to-Ambient

Note 1

RQJA

42

°C/W

Thermal Resistance, Junction-to-Case

RQJC

12

°C/W

Features

Maximum Ratings 25°C unless otherwise specified

D

G

D

S

A

B

C D

G

H

J

K

L

M

N

P

R

S

E

Mechanical Data

·

SOT-223 Plastic Case

·

Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

SOT-223

Dim

Min

Max

A

6.30

6.71

B

2.90

3.10

C

6.71

7.29

D

3.30

3.71

E

2.22

2.35

G

0.92

1.00

H

1.10

1.30

J

1.55

1.80

K

0.025

0.102

L

0.66

0.79

M

4.55

4.70

N

—

10°

P

10°

16°

R

0.254

0.356

S

10°

16°

All Dimensions in mm

Similar Part No. - DT014L

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	DT014	73Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11602 Rev.C-4

More results

Similar Description - DT014L

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

DT014L Datasheet(PDF) 1 Page - Diodes Incorporated

DT014L Datasheet(HTML) 1 Page - Diodes Incorporated

Similar Part No. - DT014L

Similar Description - DT014L

Html Pages

1 2 3 4

Datasheet Download

Link URL