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F4905S Datasheet(PDF) 2 Page - International Rectifier |
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F4905S Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF4905S/L Starting TJ = 25°C, L = 1.3mH RG = 25Ω, IAS = -38A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF4905 data and test conditions Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω VGS = -10V, ID = -38A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 21 ––– ––– S VDS = -25V, ID = -38A ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 180 ID = -38A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 18 ––– VDD = -28V tr Rise Time ––– 99 ––– ID = -38A td(off) Turn-Off Delay Time ––– 61 ––– RG = 2.5 Ω tf Fall Time ––– 96 ––– RD = 0.72Ω, See Fig. 10 Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 3400 ––– VGS = 0V Coss Output Capacitance ––– 1400 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V trr Reverse Recovery Time ––– 89 130 ns TJ = 25°C, IF = -38A Qrr Reverse Recovery Charge ––– 230 350 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A S D G -74 -260 |
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