Parameter

Max.

Units

Drain- Source Voltage

20

V

6.5

5.2

A

Pulsed Drain Current



20

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

01/13/03

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRLMS2002

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The

Micro6

 package with its customized leadframe

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Description

Top View

1

2

D

G

A

D

D

D

S

3

4

5

6

Micro6



PD- 93758D