D

S11607 Rev. C-4

2 of 4

DT451N

Notes:

2. Pulse Test: Pulse width

l 300µs, duty cycle l 2.0%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

——

2.0

20

µA

Gate-Body Leakage, Forward

—

—

100

nA

Gate-Body Leakage, Reverse

—

—

-100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

0.7

1.6

1.2

3.0

2.2

V

Static Drain-Source On-Resistance

—

0.042

0.065

0.064

0.05

0.10

0.08

W

On-State Drain Current

18

15

——

A

Forward Transconductance

—

6.0

—

m

DYNAMIC CHACTERISTICS

Input Capacitance

—

730

—

pF

f = 1.0MHz

Output Capacitance

—

370

—

pF

Reverse Transfer Capacitance

—

140

—

pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

—20

30

ns

W

Turn-On Rise Time

—15

25

ns

Turn-Off Delay Time

—19

40

ns

Turn-Off Fall Time

—10

30

ns

Total Gate Charge

—16

25

nC

Gate-Source Charge

—

1.8

3

nC

Gate-Drain Charge

—

4.5

7.0

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

—

2.5

A

Drain-Source Diode Forward Voltage

—

0.8

1.2

V