DT452AP datasheet(2/4 Pages) DIODES

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S11611 Rev. C-4

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DT452AP

Electrical Characteristics25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

Tj = 55°C

IDSS

——

-1.0

-10

µA

VDS = -24V, VGS = 0V

Gate-Body Leakage, Forward

IGSSF

—

100

VGS = 20V, VDS = 0V

Gate-Body Leakage, Reverse

IGSSR

—

-100

VGS = -20V, VDS = 0V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Tj = 125°C

VGS(th)

-1.0

-0.7

-1.6

-1.2

-2.8

-2.2

VDS =VGS, ID = -250µA

Static Drain-Source On-Resistance

Tj = 125°C

RDS (ON)

—

0.052

0.075

0.085

0.065

0.13

0.10

VGS = -10V, ID = -5.0A

VGS = -4.5V, ID = -4.3A

On-State Drain Current

ID(ON)

-15

-5.0

——

VGS = -10V, VDS = -5 .0V

VGS = -4.5V, VDS = -5 .0V

Forward Transconductance

gFS

—

7.0

—

VDS = -10V, ID = -5.0A

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

—

690

—

VDS = -15V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS

—

430

—

Reverse Transfer Capacitance

CRSS

—

160

—

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

tD(ON)

—

9.0

VDD = -10V, ID = -1.0A

VGEN = -10V, RGEN = 6.0

Turn-On Rise Time

—20

Turn-Off Delay Time

tD(OFF)

—40

Turn-Off Fall Time

—19

Total Gate Charge

—22

VDS = -10V. ID = -5.0A.

VGS = -10V

Gate-Source Charge

Qgs

—

3.2

—

Gate-Drain Charge

Qgd

—

5.2

—

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

-2.5

Drain-Source Diode Forward Voltage

VSD

—

-0.85

-1.2

VGS = 0V, IS = -2.5A (Note 2)

Notes:

2. Pulse Test: Pulse width

l 300 µs, duty cycle l 2.0%.

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