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DT452P Datasheet(PDF) 2 Page - Diodes Incorporated |
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DT452P Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() D S11612 Rev. C-4 2 of 4 DT452P Electrical Characteristics25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj = 55°C IDSS —— 1.0 10 µA VDS = 24V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) -1.0 -0.7 1.6 1.2 3.0 2.2 V VDS=VGS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.030 0.042 0.042 0.058 0.035 0.070 0.055 0.100 W VGS = 10V, ID = 7.2A VGS = 4.5V, ID = 6.0A On-State Drain Current ID(ON) 25 15 —— A VGS = 10V, VDS = 5.0V VGS = 4.5V, VDS = 5.0V Forward Transconductance gFS —11— m VDS = 10V, ID = 7.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 720 — pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance COSS — 370 — pF Reverse Transfer Capacitance CRSS — 250 — pF SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) —12 20 ns VDD = 10V, ID = 1.0A VGEN = 10V, RGEN = 6.0 W Turn-On Rise Time tr —13 30 ns Turn-Off Delay Time tD(OFF) —29 50 ns Turn-Off Fall Time tf —10 20 ns Total Gate Charge Qg —19 30 nC VDS = 10V, ID = 3.0A. VGS = 10V Gate-Source Charge Qgs — 2.3 — nC Gate-Drain Charge Qgd — 5.5 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current IS — — 2.3 A Drain-Source Diode Forward Voltage VSD — 0.9 1.3 V VGS = 0V, IS = 7.2A (Note 2) Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. |
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