DS11609 Rev. C-4

2 of 4

DT455N

Notes:

2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

IDSS

—

—

1.0

10

µA

Gate-Body Leakage, Forward

—

—

100

nA

Gate-Body Leakage, Reverse

—

—

-100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

0.7

1.5

0.9

3.0

2.2

V

Static Drain-Source On-Resistance

—

0.013

0.019

0.018

0.015

0.03

0.02

W

VGS = 4.5V, ID = 10A

On-State Drain Current

30

15

——

A

VGS = 10V, VDS = 5.0V

VGS = 4.5V, VDS = 5.0V

Forward Transconductance

—26—

m

DYNAMIC CHARACTERISTICS

Input Capacitance

—

1220

—

pF

f = 1.0MHz

Output Capacitance

—

715

—

pF

Reverse Transfer Capacitance

—

280

—

pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

—11

20

ns

Turn-On Rise Time

—16

30

ns

Turn-Off Delay Time

—48

80

ns

Turn-Off Fall Time

—40

70

ns

Total Gate Charge

—46

61

nC

Gate-Source Charge

—

4.0

—

nC

Gate-Drain Charge

—11—

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

—

2.5

A

Drain-Source Diode Forward Voltage

—

0.845

1.2

V

Reverse Recovery Time

—

—

140

ns