DT456P datasheet(2/4 Pages) DIODES

2 / 4 page

S11614 Rev. C-4

2 of 4

DT456P

Electrical Characteristics25°C unless otherwise specified

Notes:

2. Pulse Test: Pulse width

l 300µs, duty cycle l 2.0%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

Tj = 70°C

IDSS

——

-1.0

-10

µA

VDS = -24V, VGS = 0V

Gate-Body Leakage, Forward

IGSSF

—

100

VGS = 20V, VDS = 0V

Gate-Body Leakage, Reverse

IGSSR

—

-100

VGS = -20V, VDS = 0V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

TJ = 125°C

VGS(th)

-1.0

-0.5

-1.5

-1.1

3.0

-2.6

VDS =VGS, ID = -250µA

Static Drain-Source On-Resistance

Tj = 125°C

RDS (ON)

—

0.026

0.035

0.041

0.03

0.054

0.045

VGS = -10V, ID = -7.5A

VGS = -4.5V, ID = -6.0A

On-State Drain Current

ID(ON)

-20

-10

——

VGS = -10V, VDS = -5.0V

VGS = -4.5V, VDS = -5.0V

Forward Transconductance

gFS

—13—

VDS = -10V, ID = -7.5A

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

—

1440

—

VDS = -15V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS

—

905

—

Reverse Transfer Capacitance

CRSS

—

355

—

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

tD(ON)

—10

VDD = -15V, ID = -7.0A

VGEN = -10V, RGEN = 12

Turn-On Rise Time

—

120

Turn-Off Delay Time

tD(OFF)

—

130

Turn-Off Fall Time

—

130

Total Gate Charge

—47

VDS = -10V. ID = -7.5A.

VGS = -10V

Gate-Source Charge

Qgs

—

5.0

—

Gate-Drain Charge

Qgd

—12—

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

-2.5

Drain-Source Diode Forward Voltage

VSD

—

-0.85

-1.2

VGS = 0V, IS = -2.5A (Note 2)

Reverse Recovery Time

trr

—

140

VGS = 0V, IF = -2.5A

dlp/dt = 100A/µs

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