©

1996

DATA SHEET

SILICON TRANSISTOR

2SC4225

DESCRIPTION

The 2SC4225 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF through UHF band.

It has large dynamic range and good current characteristics.

FEATURES

•

Low Noise and High Gain

NF = 1.5 dB TYP.

(reference value)

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

70

mA

Total Power Dissipation

160

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

Characteristics

Symbol

MIN.

TYP.

MAX.

Unit

Test Conditions

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

40

80

200

Gain Bandwidth Product

4

GHz

Output Capacitance

1.2

1.8

pF

Insertion Power Gain

7.5

9.0

dB

Noise Figure

NF

1.5

3.0

dB

Rank

R2

R3

Marking

R2

R3

40 to 120

100 to 200

Document No. P11192EJ2V0DS00 (2nd edition)

Date Published February 1996 P

Printed in Japan

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.1

1.25 ± 0.1

2

1

3

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector