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KBJ601G Datasheet(PDF) 1 Page - Diodes Incorporated

Part # KBJ601G
Description  6.0A GLASS PASSIVATED BRIDGE RECTIFIER
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

KBJ601G Datasheet(HTML) 1 Page - Diodes Incorporated

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DS21207 Rev. F-2
1 of 2
KBJ6005G-KBJ610G
KBJ6005G - KBJ610G
6.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500VRMS
·
Low Reverse Leakage Current
·
Surge Overload Rating to 170A Peak
·
Ideal for Printed Circuit Board Applications
·
Plastic Material - UL Flammability
Classification 94V-0
·
UL Listed Under Recognized Component Index,
File Number E94661
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·
Case: Molded Plastic
·
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
·
Polarity: Molded on Body
·
Mounting: Through Hole for #6 Screw
·
Mounting Torque: 5.0 in-lbs Maximum
·
Approx. Weight: 4.6 grams
·
Marking: Type Number
Mechanical Data
_
A
B
D
J
K
C
E
G
H
L
M
N
P
R
KBJ
Dim
Min
Max
A
24.80
25.20
B
14.70
15.30
C
4.00 Nominal
D
17.20
17.80
E
0.90
1.10
G
7.30
7.70
H
3.10 Æ 3.40 Æ
J
3.30
3.70
K
1.50
1.90
L
9.30
9.70
M
2.50
2.90
N
3.40
3.80
P
4.40
4.80
R
0.60
0.80
All Dimensions in mm
Characteristic
Symbol
KBJ
6005G
KBJ
601G
KBJ
602G
KBJ
604G
KBJ
606G
KBJ
608G
KBJ
610G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(rMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TC = 110°C
IO
6.0
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
170
A
Forward Voltage per element
@ IF = 3.0A
VFM
1.0
V
Peak Reverse Current
@TC = 25°C
at Rated DC Blocking Voltage
@ TC = 125°C
IRM
5.0
500
µA
I2t Rating for Fusing (t < 8.3ms) (Note 3)
I2t
120
A2s
Typical Junction Capacitance per Element (Note 1)
Cj
80
pF
Typical Thermal Resistance (Note 2)
RqJC
1.5
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
°C
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
3. Non-repetitive, for t > 1ms and < 8.3ms.


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