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MMDT4146 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MMDT4146
Description  COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMDT4146 Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30162 Rev. D-1
2 of 2
MMDT4146
Electrical Characteristics, NPN 4124 Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
30
¾
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
VCB = 20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
¾
¾
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.30
V
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
0.95
V
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Electrical Characteristics, PNP 4126 Section @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-25
¾
V
IC = -10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
¾
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
¾
¾
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.40
V
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-0.95
V
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100
mA,
RS = 1.0k
W, f = 1.0kHz
Notes:
3. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.



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