MTS3572G6 datasheet(2/9 Pages) CYSTEKEC

2 / 9 page

CYStech Electronics Corp.

Spec. No. : C778G6

Issued Date : 2012.02.10

Revised Date : 2012.10.09

Page No. : 2/9

MTS3572G6

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

BVDSS

-20

Gate-Source Voltage

VGS

Continuous Drain Current @TA=25

°C (Note 1)

0.3

-4.3

Continuous Drain Current @TA=70

°C (Note 1)

0.24

-3.4

Pulsed Drain Current (Note 2)

IDM

0.8

-20

1.14

Total Power Dissipation (Note 1)

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Thermal Resistance, Junction-to-Ambient (Note 1)

Rth,ja

110

°C/W

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180

°C/W when mounted on minimum copper pad

Pulse width limited by maximum junction temperature

N-Channel Electrical Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

VGS=0, ID=250μA

VGS(th)

1.0

2.5

VDS=VGS, ID=250μA

IGSS

±10

VGS=±20V, VDS=0

VDS=60V, VGS=0

IDSS

μA

VDS=48V, VGS=0, Tj=70

°C

1.5

2.5

ID=300mA, VGS=10V

1.9

ID=100mA, VGS=4.5V

*RDS(ON)

3.3

ID=10mA, VGS=2.5V

*GFS

100

240

VDS=10V, ID=100mA

Dynamic

Ciss

30.6

Coss

5.5

Crss

VDS=10V, VGS=0, f=1MHz

*td(ON)

2.6

*tr

7.1

*td(OFF)

8.6

*tf

VDS=30V, ID=100mA, VGS=5V, RG=25Ω

*Qg

0.7

*Qgs

0.3

*Qgd

0.1

VDS=30V, ID=0.3A, VGS=4.5V

Source-Drain Diode

*IS

0.3

*ISM

0.8

*VSD

1.2

VGS=0V, IS=100mA

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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