2SC5012 datasheet(2/7 Pages) NEC

Part #	2SC5012

Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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2 / 7 page

2SC5012

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

Collector Cutoff Current

ICBO

1.0

µAVCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

100

250

VCE = 8 V, IC = 20 mA*1

Gain Bandwidth Product

9.0

GHz

VCE = 8 V, IC = 20 mA

Feed-back Capacitance

Cre

0.25

0.8

VCB = 10 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

VCE = 8 V, IC = 20 mA,f = 1.0 GHz

Noise Figure

1.2

2.5

VCE = 8 V, IC = 7 mA,f = 1.0 GHz

*1 Pulse Measurement; PW

≤ 350

µs, Duty Cycle ≤ 2 % Pulsed.

*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank

Marking

R36

R37

R38

hFE

50 to 100

80 to 160

125 to 250

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