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CP343V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP343V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PRINCIPAL DEVICE TYPE CXDM1002N GROSS DIE PER 6 INCH WAFER 7,774 PROCESS CP343V High Voltage MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 55 x 55 MILS Die Thickness 7.1 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bonding Pad Area 43 x 43 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å www.centr a lsemi.com R0 (19-March 2013) |
Similar Part No. - CP343V |
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Similar Description - CP343V |
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