MPS650 datasheet(1/2 Pages) CENTRAL

Part #	MPS650

Description	NPN - High Current Transistor Chip

PDF	2 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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1 / 2 page

GEOMETRY

PROCESS DETAILS

PRINCIPAL DEVICE TYPES

CBCP68

CBCX68

CMPT651

CZT651

MPS650

MPS651

GROSS DIE PER 5 INCH WAFER

10,583

PROCESS CP314V

Small Signal Transistor

NPN - High Current Transistor Chip

Process

EPITAXIAL PLANAR

Die Size

40 x 40 MILS

Die Thickness

7.1 MILS

Base Bonding Pad Area

7.9 x 8.7 MILS

Emitter Bonding Pad Area

9.0 x 14 MILS

Top Side Metalization

Al - 30,000Å

Back Side Metalization

Au-As - 13,000Å

www.centra lsemi.com

R1 (22-March 2010)

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