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DG648BH45 Datasheet(PDF) 13 Page - Dynex Semiconductor |
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DG648BH45 Datasheet(HTML) 13 Page - Dynex Semiconductor |
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13 / 19 page ![]() DG648BH45 13/19 20 30 40 50 60 70 Rate of rise of reverse gate current dI GQ/dt - (A/µs) 30 25 20 15 10 Conditions: C S = 2.0µF, I T = 2000A T j = 25˚C T j = 125˚C 0 500 1000 1500 2000 2500 3000 On-state current I T - (A) 2.0 1.5 1.0 0.5 0 Conditions: C S = 2.0µF, dI GQ/dt = 40A/µs T j = 25˚C T j = 125˚C Fig.21 Gate storage time vs rate of rise of reverse gate current Fig.22 Gate fall time vs on-state current |
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