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2AB1116-U Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2AB1116-U
Description  PNP Plastic Encapsulated Transistor
PDF  1 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2AB1116-U Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2AB1116-U Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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2SB1116
-1A , -60V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
27-Aug-2012 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
1
Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current surface mount PNP silicon switching transistor
for Load management in portable applications
CLASSIFICATION OF hFE
Product-Rank
2SB1116-L
2SB1116-K
2AB1116-U
Range
135~270
200~400
300~600
MARKING
PACKAGE INFORMATION
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector - Base Voltage
VCBO
-60
V
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
V
Collector Current - Continuous
IC
-1
A
Collector Power Dissipation
PC
350
mW
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
-60
-
-
V
IC= -100µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50
-
-
V
IC= -1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-
-
V
IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
VCB= -60V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA
VEB= -6V, IC=0
DC Current Gain
hFE
135
-
600
VCE= -2V, IC= -100mA
81
-
-
VCE= -2V, IC= -1A
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-0.3
V
IC= -1A, IB = -50mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
-1.2
V
IC= -1A, IB = -50mA
Base -emitter voltage
VBE
-0.6
-
-0.7
V
VCE= -2V, IC= -50mA
Transition frequency
fT
70
-
-
MHz
VCE= -2V,IC= -100mA
Collector Output Capacitance
Cob
-
25
-
pF
VCB= -10V, IE=0, f=1MHz
Turn-on time
tON
-
0.07
-
µ
S
VCC= -10V,IC= -100mA,
IB1=-IB2= -0.01A, VBE(off)=2~3V
Storage time
tS
-
0.7
-
Fall time
tf
-
0.07
-
1116
Package
MPQ
Leader Size
SOT-23
3K
7 inch
SOT-23
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.04
G
-
0.18
B
2.10
2.80
H
0.40
0.60
C
1.20
1.60
J
0.08
0.20
D
0.89
1.40
K
0.6 REF.
E
1.78
2.04
L
0.85
1.15
F
0.30
0.50


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