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DS501ST Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # DS501ST
Description  Rectifier Diode
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DS501ST Datasheet(HTML) 3 Page - Dynex Semiconductor

  DS501ST Datasheet HTML 1Page - Dynex Semiconductor DS501ST Datasheet HTML 2Page - Dynex Semiconductor DS501ST Datasheet HTML 3Page - Dynex Semiconductor DS501ST Datasheet HTML 4Page - Dynex Semiconductor DS501ST Datasheet HTML 5Page - Dynex Semiconductor DS501ST Datasheet HTML 6Page - Dynex Semiconductor  
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DS501ST
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case = 175
oC
V
R = 50% VRRM - 1/4 sine
10ms half sine; T
case = 175
oC
V
R = 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2t
I
2t for fusing
A
2s
11.0
kA
387 x 103
A2s
8.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
oC/W
-
0.14
Anode dc
Clamping force 4.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
175
oC
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
4.0
5.0
kN
–55
200
oC
-
Forward (conducting)
-
185
oC
-
0.04
oC/W
oC/W
Cathode dc
-
0.14
oC/W
Double side cooled
-
0.07
oC/W
CHARACTERISTICS
Peak reverse current
Parameter
Symbol
I
RM
At V
RRM, Tcase = 175
oC-
30
mA
Conditions
Min.
Max.
Units
605 x 10
3
At T
vj = 175˚C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.25
m
Ω
At T
vj = 175˚C
-
0.7
V



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